dmp2160ufdb q document n umber : ds 37546 rev. 1 - 2 1 of 6 www.diodes.com january 2015 ? diodes incorporated dmp2160ufdb q new product dual p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c - 20 v 70 m ? @ v gs = - 4.5 v - 3.8a 85 m ? @ v gs = - 2 .5 v - 3.3 a description this mosfet is designed to minimize the on - state resistance (r ds(on) ) an d yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load switch ? power management functions ? portable power adaptors features ? low on - resistance ? low gate threshold voltage, - 0.9v max ? fast switching speed ? low input/output leakage ? low profile, 0.5mm max height ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and anti mony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: u - dfn2020 - 6 type b ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity : level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C nipdau a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.0065 grams ( a pproximate ) ordering information (note 5 ) part number case packaging dmp2160ufdb q - 7 u - dfn2020 - 6 type b 3000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant . 2. see http://w ww.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - free . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm brom ine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ 5 . for packaging details, go to our website at http://www.diodes.com/products/ packages.html . u - dfn2 020 - 6 type b b ottom view t op view internal schematic s 1 g 1 d2 s2 g2 d1 d2 pin1 d1 q1 p - channel q2 p - channel internal schematic d 2 s 2 g 2 e4 d 1 s 1 g 1 4 5 6 s g d 1 2 3 s g d
dmp2160ufdb q document n umber : ds 37546 rev. 1 - 2 2 of 6 www.diodes.com january 2015 ? diodes incorporated dmp2160ufdb q new product marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 201 6 201 7 201 8 code v w x y z a b c d e f month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d max imum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 12 v drain current (note 6 ) i d - 3.8 a pulsed drain current (note 7 ) i dm - 13 a thermal characteris tics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 6 ) p d 1.4 w thermal resistance, junction to ambient r ? ja 89 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off c haracteristics (note 8) drain - source breakdown voltage bv dss - 20 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ? ds = - 20 v, v gs = 0v gate - source leakage i gss ? ? ? ? ? ? ? ? gs = ? ds = 0v v gs = ? ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 0.45 ? ds = v gs , i d = - 250 ? ds (on) ? ? ? ? ? ? ? gs = - 4.5v, i d = - 2.8 a v gs = - 2.5v, i d = - 2. 0 a v gs = - 1.8v, i d = - 1.0a f orward transfer admittance |y fs | ? ? ds = - 5v, i d = - 2.8a diode forward voltage (note 8 ) v sd ? gs = 0v, i s = - 1.6a dynamic characteristics input capacitance c iss ? ? ds = - 10v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ? ? gs = - 4.5 v, v d d = - 10 v, i d = - 1.5 a gate - source charge q gs ? ? gd ? ? d(on) ? ? g en = - 4.5 v , v d d = - 10 v , r l = 10 , r g = 6 r ? ? d(off) ? ? f ? ? notes: 6 . devi ce mounted on fr - 4 pcb, on minimum recommended, 2oz copper pad layout. 7 . repetitive rating, pulse width limited by junction temperature. 8 . short duration pulse test used to minimize self - heating effect. p2 = marking code ym = date marking y = year (ex : v = 2008) m = month (ex: 9 = september) dot denotes pin 1 p2 y m
dmp2160ufdb q document n umber : ds 37546 rev. 1 - 2 3 of 6 www.diodes.com january 2015 ? diodes incorporated dmp2160ufdb q new product 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 7 8 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -2.5v gs v = -4.5v gs v = -1.8v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 0.5 1 1.5 2 0 2 4 6 8 10 - i , d r a i n c u r r e n t ( a ) d fig. 2 typical transfer characteristics -v , gate source voltage (v) gs v = -5v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 7 8 -i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.03 0.05 0.07 0.09 0.11 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 0 1 2 3 4 5 fig. 1 typical output characteristics -v , drain-source voltage (v) ds 0 2 4 6 8 10 - i , d r a i n c u r r e n t ( a ) d v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -8.0v gs v = -1.0v gs v = -1.2v gs
dmp2160ufdb q document n umber : ds 37546 rev. 1 - 2 4 of 6 www.diodes.com january 2015 ? diodes incorporated dmp2160ufdb q new product 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current 0 2 4 6 8 10 - i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 4 8 12 16 20 -v , drain-source voltage (v) fig. 10 typical drain-source leakage current vs. voltage ds 10,000 - i , l e a k a g e c u r r e n t ( n a ) d s s 1,000 100 10 1 t = 150c a t = 125c a t = 85c a t = 25c a 10 100 1,000 10,000 c , c a p a c i t a n c e ( p f ) 0 4 8 12 16 20 fig. 7 typical capacitance -v , drain-source voltage (v) ds f = 1mhz c iss c oss c rss 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 146c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = 0.9 fig. 11 transient thermal response t , pulse duration time (s) 1 fig. 8 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = -250a d i = -1ma d
dmp2160ufdb q document n umber : ds 37546 rev. 1 - 2 5 of 6 www.diodes.com january 2015 ? diodes incorporated dmp2160ufdb q new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 ? ? ? ? b 0.20 0.30 0.25 d 1.95 2.075 2.00 d ? ? ? ? d2 0.50 0.70 0.60 e ? ? ? ? e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f ? ? ? ? l 0.25 0.35 0.30 z ? ? ? ? all dimensions in mm dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1
dmp2160ufdb q document n umber : ds 37546 rev. 1 - 2 6 of 6 www.diodes.com january 2015 ? diodes incorporated dmp2160ufdb q new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular pu rpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, no r the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es in corporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated produ cts for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of person al injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered b y one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authori zed for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are i ntended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that t hey have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their prod ucts and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully in demnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com
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